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A Method for Fabricating Dislocation-free Strained Si Thin-films using Porous Silicon Substrates

User photo not available By Bob Nidever in Latest Inventions
Published: Wednesday, 03 December 08 - 09:19 PM (GMT)

 Researchers at UCLA have developed a method for fabricating strained Si thin films without introducing any dislocations during the fabrication process. MORE [2005-731]


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