Low Temperature Wafer Bonding of III-V Materials via Dry Passivation
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By Bob Nidever in Latest Inventions Published: Thursday, 08 January 09 - 11:18 PM (GMT) |
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Researchers at UCLA have developed a method for wafer bonding via a unique surface treatment and low-temperature processing sequence that offers high bond adhesion, electrical conductivity continuity across the interface, and optical transparency. Because of the reduced temperatures used in the processing steps, devices with more complicated fabrication schemes can be used without having to worry about their degradation. MORE [2008-544]
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